1 datasheet: C3D10170H rev. - C3D10170H Csilicon carbide schottky diode z -r ec ? r ectifier features ? 1700-volt schottky rectiier ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? halogen-free; rohs compliant beneits ? replace bipolar with unipolar rectiiers ? essentially no switching losses ? higher eficiency ? reduction of heat sink requirements ? parallel devices without thermal runaway package to-247-2 maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1700 v v rsm surge peak reverse voltage 1700 v v dc dc blocking voltage 1700 v i f continuous forward current 14.4 a t c <135?c i frm repetitive peak forward surge current 4526 a t c =25?c, t p =10 ms, half sine wave, d=1 t c =110?c, t p =10 ms, half sine wave, d=1 i fsm non-repetitive peak forward surge current 5541 a t c =25?c, t p =10ms, half sine wave, d=1 t c =110?c, t p =10 ms, half sine wave, d=1 p tot power dissipation 231100 w t c =25?c t c =110?c t c maximum case temperature 135 ?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c to-247 mounting torque 1 8.8 nm lbf-in m3 screw6-32 screw part number package marking C3D10170H to-247-2 c3d10170 v rrm = 1700 v i f; t c <135?c = 14.4 a q c = 96 nc pin 1pin 2 case downloaded from: http:/// subject to change without notice. www.cree.com/power
2 C3D10170H rev. - 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.7 3 2 3.5 v i f = 10 a t j =25c i f = 10 a t j =175c i r reverse current 20 100 60 300 a v r = 1700 v t j =25c v r = 1700 v t j =175c q c total capacitive charge 96 nc v r = 1700 v, i f = 10 a d i /d t = 200 a/s t j = 25c c total capacitance 827 7841 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note:1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc thermal resistance from junction to case 0.65 c/w typical performance figure 1. forward characteristics 0 1 2 3 4 5 0 250 500 750 1000 1250 1500 1750 2000 2250 figure 2. reverse characteristics i f (a) v f (v) i r (a) v r (v) t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c downloaded from: http:///
3 C3D10170H rev. - typical performance 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 i f(peak) (a) t c ?c t c ?c p tot (w) figure 3. current derating 0 100 200 300 400 500 600 700 800 900 0.1 1 10 100 1000 10000 figure 4. power derating 0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage qrr (nc) v r (v) c (pf) v r (v) 0 50 100 150 200 250 25 50 75 100 125 150 175 10% duty 30% duty 50% duty 70% duty dc downloaded from: http:///
4 C3D10170H rev. - typical performance figure 7. transient thermal impedance 0.0001 0.001 0.01 0.1 1 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 10 thermal resistance (?c/w) t (sec) downloaded from: http:///
5 5 C3D10170H rev. - this product has not been designed or tested for use in, and is not intended for use in, application s implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac deibrillato rs or similar emergency medical equipment, aircraft navigation or communication or control systems, air trafic control systems, or w eapons systems. copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to chan ge without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic po llutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substance s, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electroni c equipment (rohs), as amended through april 21, 2006. diode model v t r t diode model csd10060 vf t = v t + if*r t v t= 0.92 + (t j * -1.35*10 -3 ) r t= 0.052 + (t j * 0.29*10 -3 ) note: t j = diode junction temperature in degrees celcius vf t = v t +if*r t v t = 0.975+(t j * -1.4*10 -3 ) r t = 0.053+(t j * 1.1*10 -3 ) pos inches millimeters min max min max a 0.185 0.209 4.70 5.31 a1 0.087 0.102 2.21 2.59 b 0.040 0.055 1.02 1.40 b1 0.065 0.088 1.65 2.23 c 0.016 0.031 0.41 0.79 d 0.819 0.845 20.80 21.46 e 0.61 0.640 15.49 16.26 e 0.215 0.215 5.46 5.46 l 0.78 0.80 19.81 20.32 l1 0.164 0.176 4.17 4.47 ? p 0.140 0.144 3.56 3.66 q 0.212 0.244 5.38 6.20 ? r 0.135 0.157 3.43 3.99 ? s 0.278 0.288 7.06 7.32 v 0.652 0.662 16.56 16.81 w 0.000 0.006 0.00 0.15 pin 1pin 2 case e package dimensions package to-247-2 downloaded from: http:///
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